| PART |
Description |
Maker |
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
Motorola, Inc.
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| MCH5836 |
MOSFET : P-Channel Silicon MOSFET OSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB
Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
| BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB
Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
| VEC2814 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2813 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2830 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5856 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5862 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| C2M1000170D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
